TSMC's First Breakthrough: The Copper/Low-K Interconnect Transition
Asianometry・2 minutes read
Building houses requires connecting roads and sidewalks, similar to how an integrated circuit needs interconnects to link transistors. TSMC led the transition to copper/Low-K interconnects in the semiconductor industry, with other companies following suit to improve signal transmission efficiency.
Insights
- The semiconductor industry transitioned from aluminum to copper interconnects to improve signal transmission by reducing resistance and unwanted capacitance, with IBM's groundbreaking copper interconnect production in 1997 marking a significant advancement in technology.
- IBM's struggles with copper interconnect production led to innovative solutions like the damascene method and "super-filling" techniques, influencing competitors like Motorola, AMD, AT&T, and Intel to start their copper interconnect programs, ultimately advancing the industry through public-private partnerships and widespread adoption of copper interconnects.
Get key ideas from YouTube videos. It’s free
Recent questions
What are interconnects in semiconductor technology?
Interconnects are wires that transmit electrical signals between circuit elements, typically made from materials like aluminum and silicon dioxide. They play a crucial role in linking transistors and enabling the flow of information within integrated circuits.
How do copper interconnects improve signal transmission?
Copper interconnects aim to reduce resistance and unwanted capacitance, enhancing signal transmission speed within semiconductor devices. This transition from traditional aluminum interconnects marked a significant advancement in the industry, leading to improved performance and efficiency.
What challenges did IBM face with copper interconnect implementation?
IBM encountered difficulties with copper's potential to poison silicon and cause defects in their chip foundry. This required the isolation of tools and the development of new waste disposal technologies to ensure the successful integration of copper interconnects in semiconductor production.
Why did the semiconductor industry transition to copper interconnect technology?
The shift to copper interconnects was driven by the need to improve signal transmission speed by reducing resistance and capacitance in semiconductor devices. This technological advancement marked a significant milestone in the industry's quest for enhanced performance and efficiency.
How did TSMC lead the adoption of copper interconnect technology?
TSMC played a pivotal role in advancing copper interconnect technology by developing their own implementation methods and successfully shipping 130 nanometer chips with copper interconnects and Low-K dielectric. Their innovative approach and dedication to technological progress set a benchmark for the semiconductor industry.
Related videos
Summary
00:00
"Interconnects in Semiconductor Technology: A Overview"
- Building houses requires connecting roads and sidewalks, similar to how an integrated circuit needs interconnects to link transistors.
- Interconnects are wires transmitting electrical signals between circuit elements, traditionally made from aluminum and silicon dioxide.
- TSMC led the transition to copper/Low-K interconnects in the semiconductor industry.
- Metallization is the process of laying down metal interconnects after transistor production.
- Interconnects involve metal layers separated by insulating dielectric layers, with vias connecting them.
- RC delay, caused by resistance and capacitance, affects signal transmission speed in interconnects.
- Local interconnects connect adjacent elements on a chip, while global interconnects span larger areas.
- Logic chips have more metal layers than memory chips due to their irregular structure and need for proper connections.
- The shift to copper interconnects from aluminum aimed to reduce resistance and unwanted capacitance, improving signal transmission.
- IBM's successful production of copper interconnects in 1997 marked a significant advancement in semiconductor technology, addressing manufacturing challenges like copper diffusion and etching.
14:33
Evolution of Copper Interconnect Technology in Semiconductors
- The process of creating copper interconnects involves etching patterns onto a dielectric layer, applying a diffusion barrier made of tantalum, filling the trench with copper using electroplating, sanding off excess copper, and applying a capping layer.
- IBM's groundbreaking announcement was the result of technological advancements in discovering tantalum as a diffusion barrier and inventing the damascene method around 1985.
- IBM struggled to fill trenches and vias with copper until the idea of "super-filling" or "bottoms-up growth" using electroplating was discovered in 1989.
- IBM's initial damascene production method was not economically viable, leading to the development of a "dual damascene" methodology in 1995 for high-volume production.
- IBM faced challenges in implementing copper interconnects in their chip foundry due to copper's potential to poison silicon and cause defects, requiring isolation of tools and new waste disposal technologies.
- Competitors quickly caught up with IBM's copper interconnect technology after the announcement, with Motorola, AMD, AT&T, and Intel all starting their copper interconnect programs at various times.
- The semiconductor industry rapidly advanced in copper interconnect technology through research funded by Sematech and public-private partnerships, leading to widespread adoption of copper interconnects.
- The transition to the 180 nanometer node in 1999 saw technical changes including copper interconnects, new lithography tools, and the 300mm wafer transition, with IBM leading the technological race.
- Asian foundries like TSMC and UMC in Taiwan quickly adopted copper interconnect technology through different paths, with UMC joining an IBM-sponsored research consortium and TSMC developing their own copper interconnect implementation.
- The semiconductor industry faced challenges in finding a suitable Low-K material for intermetal dielectric layers to reduce capacitance, with previous attempts at FSG and HSQ failing to scale in high-volume production.
28:58
TSMC's Innovation in 130nm Chip Production
- TSMC faced a major issue during production, leading to intense work over Christmas, New Year, and Chinese New Year to resolve it, with Texas Instruments experiencing a similar challenge.
- The industry transitioned to the legendary 130 nanometer node, with IBM adopting a Low-K material called SiLK, while Texas Instruments and TSMC opted for Black Diamond due to its CVD application.
- TSMC became the first to ship 130 nanometer chips with copper interconnects and Low-K dielectric, offering an FSG dielectric version for customers like Nvidia, achieving yields of 70% and higher by late 2002.
- IBM's initial SiLK decision faced setbacks, leading to a shift to CVD, highlighting the industry's recognition of TSMC's innovative prowess through the successful 130-nanometer node.
